Datasheet Details
| Part number | KTD2060 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.46 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | KTD2060-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KTD2060 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.46 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | KTD2060-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 0.3A) ·Complement to Type KTB1368 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.4 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTD2060 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor KTD2060 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 V(BR)EBO Emitter –Base Breakdown Voltage IE= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTD2060 | TRIPLE DIFFUSED NPN TRANSISTOR | KEC |
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