Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
- Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ (IC= 0.5A, IB= 50mA)
- plement to Type KTB1369
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High Voltage application
- TV, monitor vertical output application
- Driver stage application
- Color TV class B sound output...
