KTD2061 datasheet by Inchange Semiconductor.
| Part number | KTD2061 |
|---|---|
| Datasheet | KTD2061-InchangeSemiconductor.pdf |
| File Size | 217.52 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Low Collector Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
KTD2061 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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