Datasheet Details
| Part number | KTD2061 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.52 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | KTD2061-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KTD2061 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.52 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | KTD2061-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 0.5A, IB= 50mA) ·Complement to Type KTB1369 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High Voltage application ·TV, monitor vertical output application ·Driver stage application ·Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.2 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTD2061 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A;
IB= 50mA VBE(on) Base-Emitter On Voltage IC= 0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTD2061 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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