KTD998 - Silicon NPN Power Transistors

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Good Linearity of hFE Complement to Type KTB778 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications Recommend for 45-50W audio freque

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	KTD998
Manufacturer	Inchange Semiconductor
File Size	223.62 KB
Description	Silicon NPN Power Transistors
Datasheet	KTD998 Datasheet
Additional preview pages of the KTD998 datasheet.

📁 Similar Datasheet

KTD998 - TRIPLE DIFFUSED NPN TRANSISTOR (KEC)
KTD921 - TRIPLE DIFFUSED NPN TRANSISTOR (KEC)
KTD1003 - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
KTD101B105M32A0T00 - DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)
KTD101B106M80A0B00 - DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)
KTD101B107M99A0B00 - DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)
KTD101B155M32A0T00 - DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)
KTD101B155M43A0T00 - DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)
KTD101B156M80A0B00 - DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)
KTD101B225M32A0T00 - DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS (NIPPON CHEMI-CON)

Other Datasheets by Inchange Semiconductor

KTD1414 - Silicon NPN Power Transistors
KTD1510 - Silicon NPN Power Transistors
KTD1945 - Silicon NPN Power Transistors
KTD2058 - Silicon NPN Power Transistors
KTD2059 - Silicon NPN Power Transistors
KTD2060 - Silicon NPN Power Transistors
KTD2061 - Silicon NPN Power Transistors
KTD3055 - Silicon NPN Power Transistors

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN Power Transistor KTD998 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB778 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.

Published: Nov 14, 2016 |