| Part number | KTD998 |
|---|---|
| Datasheet | KTD998-InchangeSemiconductor.pdf |
| File Size | 223.62 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
KTD998 | TRIPLE DIFFUSED NPN TRANSISTOR | KEC |
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