Datasheet Details
| Part number | KTD998 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 223.62 KB |
| Description | Silicon NPN Power Transistors |
| Download | KTD998 Download (PDF) |
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| Part number | KTD998 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 223.62 KB |
| Description | Silicon NPN Power Transistors |
| Download | KTD998 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB778 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;
IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A ;
isc Silicon NPN Power Transistor KTD998.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KTD998 | TRIPLE DIFFUSED NPN TRANSISTOR | KEC |
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