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MBR20H150CT - Schottky Barrier Rectifier

Key Features

  • Dual rectifier construction，positive center tap.
  • Low Power Loss,High Efficiency.
  • Guard ring for overvoltage protection.
  • Metal of silicon rectifier, majonty carrier conduction.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR20H150CT FEATURES ·Dual rectifier construction，positive center tap ·Low Power Loss,High Efficiency ·Guard ring for overvoltage protection ·Metal of silicon rectifier, majonty carrier conduction ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) IFSM IRRM TJ Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current 8.