The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR2550CT
FEATURES ·Low power loss, high efficiency. ·High surge capacity.
MECHANICAL CHARACTERISTICS ·in low voltage, high frequency inverters, free wheeling,
and polarity protection applications. ·Metal silicon junction, majority carrier conduction. ·High current capacity, low forward voltage drop.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM IF(AV) IFSM
DC Blocking Voltage
Average Rectified Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130°C
Nonrepetitive Peak Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method)
50 30 150
TJ Junction Temperature
-65~150
V A A ℃
Tstg Storage Temperature Range
-50~175
℃
isc website：www.iscsemi.
MBR2550CT Datasheet
