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MBR7030WT - Schottky Barrier Rectifier

Key Features

  • Low Forward Voltage.
  • Guard -Ring for Stress Protection.
  • High Surge Capability.
  • Pb-Free Package is Available.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR7030WT FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capability ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFSM IRRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 125℃ Per Diode Per Device Nonrepetitive Peak Surge Current 8.