MBRB60H100CT
FEATURES
- Schottky barrier chip
- Low Power Loss,High Efficiency
- Guard ring for transient protection
- High Operating Junction Temperature
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- For use in high frequency rectifier of switching mode power supplies,freewheeling diodes,DC-to-DC converters or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRMS
IF(AV)
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current
100 V 60 A
Nonrepetitive Peak Surge Current
IFSM 8.3ms single half sine-wave superimposed on 350 rated load conditions
TJ Junction Temperature
175 ℃
Tstg Storage Temperature Range
-65~175 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRB60H10...
