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MBRF20150CT - Schottky Barrier Rectifier

Key Features

  • Low power loss, high efficiency.
  • Multilayer Metal -Silicon Potential Structure.
  • Beautiful High Temperature Character.
  • Have Over Voltage protect loop，high reliability.

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INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBRF20150 FEATURES ·Low power loss, high efficiency. ·Multilayer Metal -Silicon Potential Structure. ·Beautiful High Temperature Character. ·Have Over Voltage protect loop，high reliability. MECHANICAL CHARACTERISTICS ·Be optimized for ultra-low forward voltage drop to maximize efficiency in Power Supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM IF(AV) IFSM DC Blocking Voltage Average Rectified Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130°C Nonrepetitive Peak Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 150 20 150 TJ Junction Temperature -40~150 V A A ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.