MJ10012T datasheet PDF for Silicon NPN Power Transistor.
| Part number | MJ10012T |
|---|---|
| Datasheet | MJ10012T-InchangeSemiconductor.pdf |
| File Size | 216.74 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor MJ10012T Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJ10012 | 10 AMPERE POWER TRANSISTORS | Motorola Inc |
 |
MJ10012 | NPN Silicon Transistor | Wing Shing Computer Components |
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MJ10012 | Silicon NPN Power Transistors | SavantIC |
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MJ10012 | NPN Silicon Power Darlington Transistor | NTE |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| MJ10003 | Silicon NPN Darlington Power Transistor |
| MJ11013 | POWER TRANSISTOR |
| MJ11016 | Silicon NPN Darlington Power Transistor |
| MJ16002A | Silicon NPN Power Transistor |
| MJ16110 | Silicon NPN Power Transistor |
| MJ1800 | Silicon NPN Power Transistor |
