MJ11013 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage-.
MJ11013 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| MJ11013 | DARLINGTON POWER TRANSISTORS | |
Motorola Semiconductor |
MJ11013 | 30 AMPERE DARLINGTON POWER TRANSISTORS |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage-.