MJ11013
MJ11013 is manufactured by Inchange Semiconductor.
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -90V(Min.)
- High DC Current Gain-
: hFE= 1000(Min.)@IC= -20A
- Low Collector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@ IC= -20A
- plement to the NPN MJ11014
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use as output devices in plementary general purpose amplifier...
