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MJ11013 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= -20A Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A Complement to the NPN MJ11014 Minimum Lot-to-Lot variations for robust device performance and rel

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isc Silicon PNP Darlington Power Transistor MJ11013 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A ·Complement to the NPN MJ11014 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.