MJ11016 - Silicon NPN Darlington Power Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 20A Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A Complement to the PNP MJ11015 Minimum Lot-to-Lot variations for robust device performance and reliabl

📥 Download Datasheet

MJ11016 silicon npn darlington power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	MJ11016
Manufacturer	Inchange Semiconductor
File Size	207.75 KB
Description	Silicon NPN Darlington Power Transistor
Datasheet	MJ11016 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MJ11016	High-Current Complementary Silicon NPN Transistors	ON Semiconductor
MJ11016	NPN Transistor	DIGITRON
MJ11016	Transistors	Semelab Plc
MJ11011	PNP Transistor	INCHANGE
MJ11012	30 AMPERE DARLINGTON POWER TRANSISTORS	Motorola Inc

Other Datasheets by Inchange Semiconductor

Part Number	Description
MJ11013	POWER TRANSISTOR
MJ10003	Silicon NPN Darlington Power Transistor
MJ10012T	Silicon NPN Power Transistor
MJ16002A	Silicon NPN Power Transistor
MJ16110	Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJ11016 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A ·Complement to the PNP MJ11015 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.