MJ11016 Overview
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage-.
| Part number | MJ11016 |
|---|---|
| Datasheet | MJ11016_InchangeSemiconductor.pdf |
| File Size | 207.75 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage-.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| MJ11016 | High-Current Complementary Silicon NPN Transistors | ON Semiconductor | |
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MJ11016 | NPN Transistor | DIGITRON |
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MJ11016 | Transistors | Semelab Plc |
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