Datasheet4U Logo Datasheet4U.com

MJ1800 - Silicon NPN Power Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – MJ1800

Datasheet Details

Part number MJ1800
Manufacturer Inchange Semiconductor
File Size 133.72 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet MJ1800 Datasheet
Additional preview pages of the MJ1800 datasheet.

Product details

Description

High Collector-Emitter Voltage Good Linearity of hFE APPLICATIONS Designed for use in vertical deflection amplifier circuits in television receivers.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 250 V VCBO Collector- Base Voltage 500 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERM

📁 Similar Datasheet

  • MJ1000 - Medium-Power Complementary Silicon Transistors (Motorola Inc)
  • MJ10000 - 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS (Motorola Inc)
  • MJ10001 - NPN Silicon Transistor (Wing Shing Computer Components)
  • MJ10002 - NPN Transistor (INCHANGE)
  • MJ10004 - Darlington Power Transistor (Multicomp)
  • MJ10005 - 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS (Motorola Inc)
  • MJ10005P - NPN Transistor (INCHANGE)
  • MJ10006 - NPN Silicon Transistor (Wing Shing Computer Components)
Other Datasheets by Inchange Semiconductor
  • MJ10003 - Silicon NPN Darlington Power Transistor
  • MJ10012T - Silicon NPN Power Transistor
  • MJ11013 - POWER TRANSISTOR
  • MJ11016 - Silicon NPN Darlington Power Transistor
  • MJ16002A - Silicon NPN Power Transistor
  • MJ16110 - Silicon NPN Power Transistor
Published: |