MJ1800 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Collector-Emitter Voltage Good Linearity of hFE APPLICATIONS

television receivers.

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MJ1800 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	MJ1800
Manufacturer	Inchange Semiconductor
File Size	133.72 KB
Description	Silicon NPN Power Transistor
Datasheet	MJ1800 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJ1800 DESCRIPTION ·High Collector-Emitter Voltage ·Good Linearity of hFE APPLICATIONS ·Designed for use in vertical deflection amplifier circuits in television receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 250 V VCBO Collector- Base Voltage 500 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W isc website：www.iscsemi.