Datasheet Details
| Part number | MJ3055 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.86 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJ3055-InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | MJ3055 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.86 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJ3055-InchangeSemiconductor.pdf |
|
|
|
·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 117 W TJ, Tstg Operating and Storage Junction Temperature Range -55~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W MJ3055 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MJ3055 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| MJ3738 | Silicon PNP Power Transistor |
| MJ3771 | Silicon NPN Power Transistor |
| MJ3772 | Silicon NPN Power Transistor |
| MJ3773 | Silicon NPN Power Transistor |