MJ3738 - Silicon PNP Power Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min) High Switching Speed APPLICATIONS

applications.

📥 Download Datasheet

MJ3738 silicon pnp power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	MJ3738
Manufacturer	Inchange Semiconductor
File Size	135.40 KB
Description	Silicon PNP Power Transistor
Datasheet	MJ3738 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MJ3771	HIGH-POWER NPN SILICON TRANSISTORS	Motorola
MJ3772	HIGH-POWER NPN SILICON TRANSISTORS	Motorola
MJ3000	10 AMPERE DARLINGTON POWER TRANSISTORS	Motorola
MJ3000	Bipolar NPN Device	Semelab PLC
MJ3000	Complementary Silicon Power Darlington Transistors	ST Microelectronics

Other Datasheets by Inchange Semiconductor

Part Number	Description
MJ3771	Silicon NPN Power Transistor
MJ3772	Silicon NPN Power Transistor
MJ3773	Silicon NPN Power Transistor
MJ3055	Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification MJ3738 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min) ·High Switching Speed APPLICATIONS ·Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -225 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A PD Total Power Dissipation@TC=25℃ 20 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ isc website：www.iscsemi.