Datasheet Details
| Part number | MJ3738 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 135.40 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJ3738-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product.
| Part number | MJ3738 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 135.40 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJ3738-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min) ·High Switching Speed APPLICATIONS ·Designed for high voltage switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -225 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A PD Total Power Dissipation@TC=25℃ 20 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification MJ3738 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
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