MJ3738 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min) ·High Switching Speed APPLICATIONS ·Designed for high voltage switching and amplifier applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -225 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A PD Total Power Dissipation@TC=25℃ 20 W TJ Junction Temperature 200 ℃...