Datasheet Details
| Part number | MJ6308 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 110.81 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJ6308_InchangeSemiconductor.pdf |
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Overview: .DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power.
| Part number | MJ6308 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 110.81 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJ6308_InchangeSemiconductor.pdf |
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·700V Collector-Base Breakdown Capability ·Excellent Dynamic Saturation Characteristics ·Fast swithing ·Low Saturation Voltage ·Advanced Technology Replacement for the 2N6308 APPLICATIONS ·Designed in circuits requiring good dynamio saturation characteristics in swithing power supply applications and other inductive swithing circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCES VEBO IC IB B MJ6308 PARAMETER Collector-Base Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature Range VALUE 700 380 10 8 4 140 200 -65~200 UNIT V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W Rth j-c isc Website：.iscsemi.cn Datasheet pdf - http://..net/ .DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ6308 TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 380 V V(BR)EBO Emitter-Collector Breakdown Voltage IE= 1.0mA;
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