MJ6308 Overview
Description
700V Collector-Base Breakdown Capability - Excellent Dynamic Saturation Characteristics - Fast swithing - Low Saturation Voltage - Advanced Technology Replacement for the 2N6308 APPLICATIONS - Designed in circuits requiring good dynamio saturation characteristics in swithing power supply applications and other inductive swithing circuits. SYMBOL VCBO VCES VEBO IC IB B MJ6308 PARAMETER Collector-Base Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature Range VALUE 700 380 10 8 4 140 200 -65~200 UNIT V V V A A W ℃ ℃ PC TJ Tstg SYMBOL PARAMETER Rth j-c isc Website： Datasheet pdf - INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ6308 TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 380 V V(BR)EBO Emitter-Collector Breakdown Voltage IE= 1.0mA; IC= 0 10 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=3A; IB= 0.4A 1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 1A B 1 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 0.1 1.5 10 V ICES Collector Cutoff Current VCE=700V; VBE=0V VCE=700V; VBE=0V, Tc=100℃ VEB=10V; IC= 0 mA IEBO Emitter Cutoff current μA hFE DC Current Gain IC= 8A; VCE=5V 5 20 Cob Output Capacitance VCE=10V; IE= 0; ftest=1.0KHz 100 pF isc Website： Datasheet pdf.
