MJ6308 Overview
·700V Collector-Base Breakdown Capability ·Excellent Dynamic Saturation Characteristics ·Fast swithing ·Low Saturation Voltage ·Advanced Technology Replacement for the 2N6308 APPLICATIONS ·Designed in circuits requiring good dynamio saturation characteristics in swithing power supply applications and other inductive swithing circuits. IB= 0 380 V V(BR)EBO Emitter-Collector Breakdown Voltage IE= 1.0mA; IC= 0 10 V...