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MJB45H11 - Silicon PNP Power Transistor

General Description

Low Collector-Emitter saturation voltage Pb-free package are available Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose amplification and switching such as out or driver stages in applicatio

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter saturation voltage ·Pb-free package are available ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplification and switching such as out or driver stages in applications such as switching regulators,converters and power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICP Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 2 W 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ MJB45H11 isc website