MJB45H11
MJB45H11 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector-Emitter saturation voltage
- Pb-free package are available
- Fast switching speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- General purpose amplification and switching such as out or driver stages in applications such as switching regulators,converters and power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-10
Collector Current-Pulse
Total Power Dissipation @ Ta=25℃
Total Power Dissipation @ TC=25℃
Junction Temperature
-20
℃
Tstg
Storage Temperature Range
-55~150 ℃
MJB45H11 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS...
