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MJD340 - Silicon NPN Power Transistor

General Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA DPAK for Surface Mount Applications Complement to Typ MJD350 Minimum Lot-to-Lot variations for robust device performance and reliable op

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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD340 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·DPAK for Surface Mount Applications ·Complement to Typ MJD350 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications.. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 3V IC Collector Current-Continuous 0.