Collector
Emitter Sustaining Voltage
: VCEO(SUS) = -40V
DC Current Gain
: hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A
Complement to the NPN MJE180
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon PNP Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage—
: VCEO(SUS) = -40V ·DC Current Gain—
: hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A
·Complement to the NPN MJE180 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low power audio amplifier applications. ·Low current high speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-peak
-6
A
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃ Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
-1
A
1.5 W
12.
MJE170 Datasheet
