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MJE182G - Silicon NPN Power Transistor

General Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 80 V DC Current Gain : hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A Complement to the PNP MJE172G Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS L

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJE182G DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 80 V ·DC Current Gain— : hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.