Download MJE182G Datasheet PDF
Inchange Semiconductor
MJE182G
MJE182G is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Collector- Emitter Sustaining Voltage- : VCEO(SUS) = 80 V - DC Current Gain- : h FE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A - plement to the PNP MJE172G - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Low power audio amplifier - Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3A ICM Collector Current-peak 6A IB Base Current Collector Power Dissipation Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 1 1.5 12.5 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX...