Datasheet4U Logo Datasheet4U.com

MJE240 - Silicon NPN Power Transistor

General Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = 80 V(Min) DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A Complement to the PNP MJE250 Minimum Lot-to-Lot variations for robust device performance an

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJE240 COMPLEMENTARY SILICON POWER TRANSISTORS Central Corp
MJE240 (MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
MJE241 (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS Central Semiconductor
MJE241 (MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
MJE242 (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS Central Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
MJE243 Silicon NPN Power Transistor
MJE200 Silicon NPN Power Transistor
MJE253 Silicon PNP Power Transistor
MJE13002 Silicon NPN Power Transistors
MJE13003A Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor MJE240 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 80 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to the PNP MJE250 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 4 ICM Collector Current-Peak 8 IB Base Current 1 Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ 1.