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MMBR911L - Silicon NPN RF Transistor

Datasheet Summary

Description

GNF = 17 dB TYP.

NF= 1.7dB TYP.

fT = 6.0 GHz TYP.

amplifiers and low-noise VCO’S.

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Datasheet preview – MMBR911L

Datasheet Details

Part number MMBR911L
Manufacturer Inchange Semiconductor
File Size 171.31 KB
Description Silicon NPN RF Transistor
Datasheet download datasheet MMBR911L Datasheet
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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR911L DESCRIPTION ·High Gain GNF = 17 dB TYP. @ IC= 10 mA, f = 500 MHz ·Low Noise Figure NF= 1.7dB TYP. @ f= 500 MHz ·High Current-Gain Bandwidth Product fT = 6.0 GHz TYP. @ IC= 30 mA APPLICATIONS ·Designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO’S. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 2V 60 mA 0.333 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.
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