MMBR911L
DESCRIPTION
- High Gain
GNF = 17 d B TYP. @ IC= 10 m A, f = 500 MHz
- Low Noise Figure
NF= 1.7d B TYP. @ f= 500 MHz
- High Current-Gain Bandwidth Product f T = 6.0 GHz TYP. @ IC= 30 m A
APPLICATIONS
- Designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO’S.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
12 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
Collector Power Dissipation @TC= 75℃
TJ Junction Temperature
Tstg Storage Temperature Range
2V
60 m A
150 ℃
-55~150
℃ isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1m A ; IB=...
