NJD1718
NJD1718 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A)
- High Switching speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high-gain audio amplifier and power
Switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM IB
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃
Junction Temperature
-50
-50
-5
-2
-3
-0.4
15...
