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NVD5C668NL - N-Channel MOSFET Transistor

Datasheet Summary

Description

and solenoid drive.

Max.

Features

  • Drain Current : ID= 49A@ TC=25℃.
  • Drain Source Voltage : VDSS= 60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 8.9mΩ(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number NVD5C668NL
Manufacturer Inchange Semiconductor
File Size 286.38 KB
Description N-Channel MOSFET Transistor
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isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 49A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.9mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 49 A PD Total Dissipation @TC=25℃ 44 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 2.
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