PMD1601K Description
IB= 0 60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 2.2kΩ 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A;.
PMD1601K is Silicon NPN Darlingtion Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| PMD1601K | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
IB= 0 60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 2.2kΩ 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A;.