Silicon NPN Darlingtion Power Transistor
| Part number | PMD1601K |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 111.68 KB |
| Description | Silicon NPN Darlingtion Power Transistor |
| Datasheet | PMD1601K_InchangeSemiconductor.pdf |
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IB= 0 60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 2.2kΩ 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
PMD1601K | COMPLEMENTARY POWER DARLINGTON TRANSISTORS | Central Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| PMD1602K | Silicon NPN Darlingtion Power Transistor |
| PMD1603K | Silicon NPN Darlingtion Power Transistor |
| PMD1701K | Silicon PNP Darlingtion Power Transistor |
| PMD1702K | Silicon PNP Darlingtion Power Transistor |
| PMD1703K | Silicon PNP Darlingtion Power Transistor |
