Q6006DH3
Q6006DH3 is Thyristors manufactured by Inchange Semiconductor.
DESCRIPTION
- With TO-252( DPAK ) uninsulated packaging
- High mutation capability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
- Switching applications
- Phase control
- Static switching on inductive or resistive load
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(RSM) Average on-state current
ITSM Surge non-repetitive on-state current
PG(AV) Tj Tstg
Average gate power dissipation Operating junction temperature Storage temperature
60HZ 50HZ
600 600
6 65 55 0.4
-40~125
-40~125
UNIT
W ℃ ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current
VR=VRRM Rated; VD=VDRM Rated;
Tj=25℃ Tj=100℃ Tj=125℃
VTM On-state voltage
Gate-trigger current
IT=6A
Ⅰ
VD =12V;IT=0.1A;
Ⅱ
Ⅲ...
