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ST26025A - Silicon PNP Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) High DC Current Gain- : hFE= 750(Min.)@IC= -10A Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification ST26025A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·High DC Current Gain- : hFE= 750(Min.)@IC= -10A ·Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.