Datasheet Summary
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
Features
- Drain Current
- ID= 80A@ TC=25℃
- Drain Source Voltage-
: VDSS= 75V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 0.011Ω(Max)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Suitable as primary switch in advanced high-efficiency, highfrequency isolated DC-DC converters for Tele and puter applications. It is also intended for any application with low gate drive requirements .
APPLICATIONS
- Switching application...
