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TIC116M - Thyristors

General Description

8A contimunous on-state current 80A surge-current Glass passivated Wafer 400V to 800V off-state Voltage Max IGT of 20mA 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Thyristors INCHANGE Semiconductor TIC116series DESCRIPTION ·8A contimunous on-state current ·80A surge-current ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC116D 400 VDRM Repetitive voltage peakoff-state TIC116M TIC116S 600 700 V TIC116N 800 TIC116D 400 VRRM Repetitive voltage peakreverse TIC116M TIC116S 600 700 V TIC116N 800 IT(AV) IT(RMS) ITM PGM PG(AV) Tj Tstg On-state current Tc=70℃ RMS on-state current Tc=70℃ Surge peak on-state current Peak gate power PW≤300μs Average gate power Operating Junction temperature Storage temperature 5 A 8 A 80 A 5 W 1 W