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TIP127 - Silicon PNP Darlington Power Transistor

General Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A = -4.0V(Max)@ IC= -5A Complement to Type TIP122 Minimum Lot-to-Lot variations for robust

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A = -4.0V(Max)@ IC= -5A ·Complement to Type TIP122 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation TIP127 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.