2SC2026
2SC2026 is Silicon NPN RF Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Noise
NF= 3.0d B TYP. @ f= 500MHz
- High Power Gain
Gpe= 15d B TYP. @ f= 500MHz
- High Gain Bandwidth Product f T= 2.0GHz TYP.
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in low noise amplifiers in the VHF~UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
50 m A
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor
INCHANGE...
