2SC3110 - Silicon Power Transistor

Inchange Semiconductor

General Description

Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS

Designed for use in RF wide band low noise amplifier.

📥 Download Datasheet

2SC3110 silicon power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC3110
Manufacturer	Inchange Semiconductor
File Size	110.39 KB
Description	Silicon Power Transistor
Datasheet	2SC3110 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC3112	TRANSISTOR	Toshiba Semiconductor
2SC3113	Silicon NPN Transistor	Toshiba Semiconductor
2SC3114	PNP/NPN Epitaxial Planar Silicon Transistors	Sanyo Semicon Device
2SC3116	PNP/NPN Epitaxial Planar Silicon Transistors	Sanyo Semicon Device
2SC3117	PNP/NPN Epitaxial Planar Silicon Transistors	Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number	Description
2SC3144	NPN Transistor
2SC3146	NPN Transistor
2SC3148	NPN Transistor
2SC3150	NPN Transistor
2SC3151	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

INCHANGE Semiconductor www.DataSheet4U.com isc RF Product Specification isc Silicon NPN RF Transistor 2SC3110 DESCRIPTION ·Low Noise ·High Gain ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in RF wide band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 30 mA ICP Collector Current-Peak 50 mA PC Collector Power Dissipation @TC=25℃ 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.