Inchange Semiconductor 2SC3110
Silicon Power Transistor
| Part No. | 2SC3110 |
|---|---|
| Datasheet | 2SC3110 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Noise●High Gain
●High Current-Gain Bandwidth Product
APPLICATIONS
●Designed for use in RF wide band low noise amplifier.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 30 mA ICP Collector Current-Peak 50 mA PC Collector Power Dissipation @TC=25℃ 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website： INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3110 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 40 fT Current-Gain—Bandwidth Product IE= -10mA ; VCE= 10V 4.5 GHz COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 1.2 pF ︱S21e︱2 Insertion Power Gain IC= 20mA;...