2SC3110
DESCRIPTION
- Low Noise
- High Gain
- High Current-Gain Bandwidth Product
APPLICATIONS
- Designed for use in RF wide band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
30 m A
Collector Current-Peak
50 m A
Collector Power Dissipation @TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor
.. isc RF Product Specification isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
