9N60 Datasheet | Inchange Semiconductor

EATURES - Drain Current - ID= 8.5A@ TC=25℃ - Drain Source Voltage: VDSS= 600V(Min) - Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) - Avalanche Energy Specified - Fast Switching - Simple Drive Requirements - DESCRITION - Designed for high efficiency switch mode power supply. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 600 ±20 8.5 34 125 150 -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.0 62.5 UNIT ℃/W ℃/W isc Website：.iscsemi.cn INCHANGE Semiconductor w w w N-Channel . D a t a S h e e t 4Mosfet U . c o m isc Transistor isc Product Specification ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25m A VGS(th) RDS(on) IGSS Gate Threshold Voltage VDS= VGS; ID= 0.25m A V Ω Drain-Source On-Resistance VGS= 10V; ID= 5A VGS= ±20V; VDS= 0 1.0 ±100 Gate-Body Leakage Current n A μA IDSS Zero Gate Voltage Drain...