Inchange Semiconductor PMD16K60
Silicon Power Transistor
| Part No. | PMD16K60 |
|---|---|
| Datasheet | PMD16K60 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
¡¤ With TO-3 package ¡¤ High DC current gain ¡¤ DARLINGTONAPPLICATIONS
¡¤ Designed for use in power switching application. PINNING (See Fig.2) PIN 1 2 3 Base Emitter CollectorDESCRIPTION
PMD16K60/80/100 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25¡æ ) SYMBOL PARAMETER PMD16K60 VCBO Collector-base voltage PMD16K80 PMD16K100 PMD16K60 VCEO Collector-emitter voltage PMD16K80 PMD16K100 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current(peak) Base current Power dissipation Max. operating Junction temperature Storage temperature TC=25¡æ Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 20 40 0.5 200 200 -65~200 ¡æ ¡æ V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 0.875 UNIT ¡æ /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER PMD16K60 V(BR)...
