Inchange Semiconductor X0402MF
Thyristors
FEATURES
●IT(RMS)=4A●VDRM=600V
●Low IGT<200uA
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Highly sensitive triggering levels●For capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(AV) Repetitive peak reverse voltage On-state current 180°conduction angle ITSM PG(AV) Non-repetitive surge peak on-state current t= 20ms Average gate power dissipation Tj = 125℃ Tj Junction temperature Tstg Storage temperatureELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM, VRM=VRRM, ,Tj=125℃ IDRM Repetitive peak off-state current VDM=VDRM, VDM=VDRM ,Tj=125℃ VTM On-state voltage ITM= 8A, tp = 380 µs IGT Gate-trigger current VD=12V, RL=140Ω, RGK=1KΩ VGT Gate-trigger volta...