2SA1387 Description
hFE= 150(Min.) @ IC= -1A ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...