2SA959 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;.