2SCR573D Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SCR573D TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=100uA BVCEO Collector-Emitter breakdown voltage IC=1mA BVEBO Emitter-Base breakdown voltage IE=100uA VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff...