2SD1351 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage-.
2SD1351 is Silicon NPN Power Transistors manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
| 2SD1351 | NPN Complementary Silicon Power Transistors |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage-.