3DD102B Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
- Part: 3DD102B
- Manufacturer: Inchange Semiconductor (official site)
- Size: 185.16 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
| Shaanxi Qunli Electric Shaanxi Qunli Electric |
3DD102 | NPN Silicon Low Frequency High Power Transistor |
Inchange Semiconductor |
3DD102D | NPN Transistor |