3DD7E Datasheet (Silicon NPN Power Transistor)

Part: 3DD7E
Manufacturer: Inchange Semiconductor (official site)
Size: 185.22 KB

Equivalent or Similar Parts

Manufacturer	Part Number	Description
Huajing Microelectronics	3DD741A8	Silicon NPN Transistor
Huajing Microelectronics	3DD742A8	Silicon NPN Transistor
Huajing Microelectronics	3DD7525A3	Silicon NPN bipolar transistor
Inchange Semiconductor	3DD7D	NPN Transistor

All 3DD7E datasheets

3DD7E Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications.