BUV18 Description
·Low Collector Saturation Voltage- : MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; L= 25mH 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;.
BUV18 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
BUV18 | NPN High Current Switching Transistors |
Seme LAB |
BUV18 | NPN HIGH CURENT SWITCHING TRANSISTORS |
Seme LAB |
BUV18X | Bipolar NPN Device |
·Low Collector Saturation Voltage- : MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; L= 25mH 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;.