D1716 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SB1161 APPLICATIONS ·Designed for high power amplifier applications.
D1716 is 2SD1716 manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SB1161 APPLICATIONS ·Designed for high power amplifier applications.