KSD5004 Description
·High Breakdown Voltage- : IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V.
- Part: KSD5004
- Manufacturer: Inchange Semiconductor (official site)
- Size: 122.85 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor |
KSD5004 | NPN Triple Diffused Planar Silicon Transistor |