KSD5007 Description
·High Breakdown Voltage- : IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 800V.
- Part: KSD5007
- Manufacturer: Inchange Semiconductor (official site)
- Size: 122.76 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor |
KSD5007 | NPN Triple Diffused Planar Silicon Transistor |