KTD2061 Description
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Low Collector Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.