MJ11016 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage-.
- Part: MJ11016
- Manufacturer: Inchange Semiconductor (official site)
- Size: 207.75 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
MJ11016 | High-Current Complementary Silicon NPN Transistors |
DIGITRON |
MJ11016 | NPN Transistor |
Semelab Plc |
MJ11016 | Transistors |