BAR64-04W
description
This Infineon cost optimized RF PIN diode is designed for low distortion switches that require to hold off large RF voltages, and is best suited for frequencies as high as 3 GHz. Its nominal 50 μm I-region width, bined with the typical 1.55 μs carrier lifetime, result in a diode with low forward resistance and low distortion characteristics.
Feature list
- Low signal distortion, charge carrier lifetime trr = 1.55 µs (typical)
- Very low capacitance C = 0.25 p F (typical) at voltage VR = 0 and frequencies f ≥ 1 Ghz
- Low forward resistance RF = 2.2 Ω (typical) at forward current IF = 10 m A and frequency f = 100 MHz
- Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm)
- Pb-free, Ro HS pliant and halogen-free
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
Optimized for low bias current RF and high-speed interface switches and attenuators
- Wireless munication
- High speed data...
