BAW78M
Silicon Switching Diode
Switching applications High breakdown voltage
4 5 3 2 1
VPW05980
Type BAW78M
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage
Forward current Peak forward current
Marking GDs 1=A
Pin Configuration
Package
2 = C 3 n.c. 4 n.c. 5 = C SCT595
Symbol VR VRM
IF IFM IFS Ptot Tj Tstg
Values 400 400
1 1 10 1 150 -65 ... 150
Unit V
Surge forward current, t = 1 s Total power dissipation , TS 110 °C Junction temperature Storage temperature
W °C
Thermal Resistance Junction
- soldering point 1) Rth JS
40
K/W
1For calculation of R th JA please refer to Application Note Thermal Resistance
Aug-21-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 1 A IF = 2 A Reverse current VR = 400 V Reverse current VR = 400 V, TA = 150 °C
AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200...
