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BB831 - Silicon Variable Capacitance Diodes

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Part number BB831
Manufacturer Infineon Technologies AG
File Size 406.60 KB
Description Silicon Variable Capacitance Diodes
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BB831... Silicon Variable Capacitance Diodes  Frequency range up to 2 GHz  Special design for use in TV-sat indoor unit BB831 1 2 Type BB831 Package SOD323 Configuration single LS (nH) Marking 1.8 white T Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R  5k ) Forward current Operating temperature range Storage temperature IF Top Tstg 20 -55 ... 125 -55 ... 150 mA °C Symbol VR VRM Value 30 35 Unit V 1 Nov-07-2002 BB831... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 20 500 pF 7.8 0.85 8.8 1.
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