BBY59
BBY59...
Silicon Tuning Diode
High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in moblie munications equipment
For control elements as TCXOS and VCXOS High capacitance ratio and good C-V linearity
BBY59-02V
Type BBY59-02V
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature
Package SC79
Configuration single
LS (n H) Marking 0.6 RR
Symbol VR IF Top Tstg
Value 15 50 -55 ... 150 -55 ... 150
Unit V m A °C
Jul-18-2002
BBY59...
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 10 V VR = 10 V, TA = 85 °C
AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V Series resistance VR = 1 V, f = 470 MHz r S 0.45 0.7 CT1 /CT4 CT 26,6 13.6 8,4 6,1 3,4 27.8 15.3 9.5 6,95 4 29 17 10.9 7,8 4,6 p F
Unit...
